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| Результаты поиска для K9E | |
| Компонент | Описание | Производитель | PDF | Buy |
| B5J3K9E | Brown Devil Vitreous Enamel Power | Ohmite Mfg. Co. |  |  |
| BUK9E04-30B | TrenchMOS logic level FET | NXP Semiconductors | | |
| BUK9E04-40A | TrenchMOS logic level FET | NXP Semiconductors | | |
| BUK9E06-55A | TrenchMOS logic level FET | NXP Semiconductors | | |
| BUK9E06-55B | N-channel TrenchMOS FET | NXP Semiconductors | | |
| BUK9E06-55B | N-channel TrenchMOSTM logic level FET | List of Unclassifed Manufacturers | | |
| K9E2G08B0M | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-F | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-FCB0 | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-FIB0 | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-P | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-PCB0 | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-PIB0 | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-V | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-VCB0 | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-VIB0 | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-Y | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-YCB0 | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08B0M-YIB0 | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
| K9E2G08U0M | 256M x 8 Bits NAND Flash Memory | Samsung semiconductor | | |
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