| Компонент | Описание | Производитель | PDF | Buy |
| K9W4G08U1M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | Samsung semiconductor |  |  |
| K9W4G16U1M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
| DBMK9W4PJ101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4PJA101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4PN101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4PV101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4PY101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4SJ101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4SJA101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4SN101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4SNA101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4SV101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| DBMK9W4SY101 | Ensuring over 20 years of mission critical communication between two worlds across 250,000,000 milies | ITT Industries | | |
| K9W8G08U1M | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
| K9WAG08U1A | 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
| K9WAG08U1A | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
| K9WAG08U1A | 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
| K9WAG08U1A-I | 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
| K9WAG08U1A-I | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
| K9WAG08U1A-I | 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
