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Компонент | Описание | Производитель | PDF | Buy |
EGL1F | Ultrafast silicon rectifier diodes | Semikron International | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
EGL1F | SURFACE MOUNT RECTIFIER | Galaxy Semi-Conductor Holdings Limited | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND04GR3B2DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND04GR4B2DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND04GR3B4DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND04GW3B4DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND04GW3B4CZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GR3B2DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GR3B2CZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GR3B4DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND04GW4B2CZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND04GW4B4CZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND04GW4B2DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GR4B2DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GR4B4DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GW3B4DZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GW3B2CZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GW3C2AZL1F | 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GW3C4BZL1F | 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NAND08GW3C4AZL1F | 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory | Numonyx B.V | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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