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![](/forums/images/ca_evo_db/misc/spacer.gif) | Результаты поиска для P4N88D | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
FQP4N80 | 800V N-Channel MOSFET | Fairchild Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MTP4N80 | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM | Motorola, Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SSP4N80 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SSP4N80AS | ADVANCED POWER MOFET | Fairchild Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MTP4N80E | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM | Motorola, Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MGP4N80E | Insulated gate bipolar transistor | Motorola, Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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