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![](/forums/images/ca_evo_db/misc/spacer.gif) | Результаты поиска для P60FN06 | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
RJP60F0DPE | 600 V - 25 A - IGBT High Speed Power Switching | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
RJP60F0DPM | 600 V - 25 A - IGBT High Speed Power Switching | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MCTG35P60F1 | 35A, 600V P-Type MOS Controlled Thyristor (MCT) | Intersil Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MCTV35P60F1D | 35A, 600V P-Type MOS Controlled Thyristor (MCT) with Anti-Parallel Diode | Intersil Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
RJP60F4DPM | 600 V - 30 A - IGBT High Speed Power Switching | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
RJP60F5DPM | 600 V - 40 A - IGBT High Speed Power Switching | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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