Компонент | Описание | Производитель | PDF | Buy |
NM27C512QM200 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | National Semiconductor | | |
NM27P040QM200 | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM | National Semiconductor | | |
NM27P512QM200 | 524,288-Bit (64K x 8) Processor Oriented CMOS EPROM | National Semiconductor | | |
NMC27C128BQM200 | High Speed Version 131,072-Bit(16k x 8) UV Erasable CMOS PROM | National Semiconductor | | |
TQM200A | Topstek Current Transducer | Topstek Inc. | | |
QM200DY-24 | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
QM200DY-24B | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
QM200DY-2H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
QM200DY-2HB | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
QM200DY-HB | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
QM200DY-HBK | 100A - transistor module for medium power switching use, insulated type | Mitsubishi Electric Semiconductor | | |
QM200DY-HK | 100A - transistor module for medium power switching use, insulated type | Mitsubishi Electric Semiconductor | | |
QM200DY-HK | 100A - transistor module for medium power switching use, insulated type | Mitsubishi Electric Semiconductor | | |
QM200HA-24 | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
QM200HA-2H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
QM200HA-HK | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
QM200HC-M | HIGH POWER SWITCHING USE NON-INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
SQM200N04-1M1L | Automotive N-Channel 40 V (D-S) 175 `C MOSFET | Vishay Siliconix | | |
SQM200N04-1M7L | Automotive N-Channel 40 V (D-S) 175 `C MOSFET | Vishay Siliconix | | |
SQM200N04-1M8 | Automotive N-Channel 40 V (D-S) 175 `C MOSFET | Vishay Siliconix | | |