| Компонент | Описание | Производитель | PDF | Buy |
| SR441 | 441.20 MHz One-Port SAW Resonator | Vanlong Technology Co., Ltd. |  |  |
| ADR441 | Ultralow Noise, LDO XFET Voltage References with Current Sink and Source | Analog Devices | | |
| ADR441 | Ultralow Noise, High Accuracy | Analog Devices | | |
| ADR441 | Ultralow Noise, LDO XFET Voltage References with Current Sink and Source | Analog Devices | | |
| CSNR441 | Solid State Sensors Closed Loop Current Sensors | Honeywell Solid State Electronics Center | | |
| SDR4410 | 10 AMPS 50 - 300 VOLTS 40 nsec HYPER FAST RECTIFIER | Solid States Devices, Inc | | |
| UTR4410 | RECTIFIERS | Microsemi Corporation | | |
| FDR4410 | N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild Semiconductor | | |
| UTR4410HR2 | RECTIFIERS | Microsemi Corporation | | |
| SDR4411 | 10 AMPS 50 - 300 VOLTS 40 nsec HYPER FAST RECTIFIER | Solid States Devices, Inc | | |
| SDR4412 | 10 AMPS 50 - 300 VOLTS 40 nsec HYPER FAST RECTIFIER | Solid States Devices, Inc | | |
| PWR4412-2S | Bare Metal Element Resistor | Bourns Electronic Solutions | | |
| PWR4412-2SBR0300J | Bare Metal Element Resistor | Bourns Electronic Solutions | | |
| PWR4413 | Current Sense Resistors | Bourns Electronic Solutions | | |
| PWR4413DR050J | Current Sense Resistors | Bourns Electronic Solutions | | |
| K4R441869A | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R441869A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R441869A-NMCK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R441869A-NMCK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | | |
