| Компонент | Описание | Производитель | PDF | Buy |
| IRG4RC10S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) | International Rectifier |  |  |
| RC10S01 | SILICON SILASTIC CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S01G | SILICON GPP CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S02 | SILICON SILASTIC CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S02G | SILICON GPP CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S04 | SILICON SILASTIC CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S04G | SILICON GPP CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S06 | SILICON SILASTIC CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S06G | SILICON GPP CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S08 | SILICON SILASTIC CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S08G | SILICON GPP CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S10 | SILICON SILASTIC CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| RC10S10G | SILICON GPP CELL RECTIFIER | Shanghai Sunrise Electronics | | |
| IRG4RC10SD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) | International Rectifier | | |
