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| RF2314 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
RF2314 | GENERAL PURPOSE LOW NOISE AMPLIFIER | RF Micro Devices |  |  |
| *RF231*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRF231 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF231 | 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs | Intersil Corporation | | |
| IRF231 | N-Channel Power MOSFETs, 12A, 150-200 V | Fairchild Semiconductor | | |
| AT86RF231 | Low power 2.4 GHz Transceiver for ZigBee, IEEE 802.15.4, and ISM Applications | ATMEL Corporation | | |
| AT86RF231-ZF | Low Power 2.4 GHz Transceiver for ZigBee | ATMEL Corporation | | |
| AT86RF231-ZU | Low power 2.4 GHz Transceiver for ZigBee, IEEE 802.15.4, and ISM Applications | ATMEL Corporation | | |
| AT86RF231-ZU | Low Power 2.4 GHz Transceiver for ZigBee | ATMEL Corporation | | |
| AT86RF231-ZU_09 | Low Power 2.4 GHz Transceiver for ZigBee | ATMEL Corporation | | |
| RF2310 | WIDEBAND GENERAL PURPOSE AMPLIFIER | RF Micro Devices | | |
| 3RF2310-1AA04 | SEMICOND. CONTACTOR 3RF2, 1-PH. AC 51 10 A 40 DEGREES C 48-460 V / 24 V DC SCREW TERMINAL | Siemens Semiconductor Group | | |
| RF2310PCBA | WIDEBAND GENERAL PURPOSE AMPLIFIER | RF Micro Devices | | |
| RF2311 | GENERAL PURPOSE AMPLIFIER | RF Micro Devices | | |
| RF2311PCBA | GENERAL PURPOSE AMPLIFIER | RF Micro Devices | | |
| RF2312 | LINEAR GENERAL PURPOSE AMPLIFIER | RF Micro Devices | | |
| RF2312 | LINEAR GENERAL PURPOSE AMPLIFIER | RF Micro Devices | | |
| RF2312PCBA | LINEAR GENERAL PURPOSE AMPLIFIER | RF Micro Devices | | |
| RF2312PCBA | LINEAR GENERAL PURPOSE AMPLIFIER | RF Micro Devices | | |
| RF2312_06 | LINEAR GENERAL PURPOSE AMPLIFIER | RF Micro Devices | | |
| RF2314 | GENERAL PURPOSE LOW NOISE AMPLIFIER | RF Micro Devices | | |
| RF2314 | GENERAL PURPOSE LOW NOISE AMPLIFIER | RF Micro Devices | | |
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