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Компонент | Описание | Производитель | PDF | Buy |
K6R1008C1A-TI12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung semiconductor | | |
K6R1008C1B-TI12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung semiconductor | | |
K6R1008C1C-TI12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung semiconductor | | |
HM62W16255CTTI12 | Wide Temperature Range Version 4M High Speed SRAM (256-kword d 16-bit) | Hitachi Semiconductor | | |
FSTI120100 | SCHOTTKY DIODES MODULE TYPE 120A | TRANSYS Electronics Limited | | |
FSTI12020 | SCHOTTKY DIODES MODULE TYPE 120A | TRANSYS Electronics Limited | | |
FSTI12030 | SCHOTTKY DIODES MODULE TYPE 120A | TRANSYS Electronics Limited | | |
FSTI12035 | SCHOTTKY DIODES MODULE TYPE 120A | TRANSYS Electronics Limited | | |
FSTI12040 | SCHOTTKY DIODES MODULE TYPE 120A | TRANSYS Electronics Limited | | |
FSTI12045 | SCHOTTKY DIODES MODULE TYPE 120A | TRANSYS Electronics Limited | | |
FSTI12060 | SCHOTTKY DIODES MODULE TYPE 120A | TRANSYS Electronics Limited | | |
FSTI12080 | SCHOTTKY DIODES MODULE TYPE 120A | TRANSYS Electronics Limited | | |
STI12NM50N | N-channel 500 V, 0.29 Y, 11 A MDmesh II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP | STMicroelectronics | | |
CAT28C512TI12T | 512K-Bit CMOS PARALLEL EEPROM | Catalyst Semiconductor | | |
CAT28C513TI12T | 512K-Bit CMOS PARALLEL EEPROM | Catalyst Semiconductor | | |
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