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Компонент | Описание | Производитель | PDF | Buy |
PTS645TL50 | 6 mm Tact Switches | ITT Industries | | |
K4E641612C-TL50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612C-TL50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4F641612C-TL50 | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
K4S641632E-TL50 | 64Mbit SDRAM | Samsung semiconductor | | |
K4S641632F-TL50 | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S643232E-TL50 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S643232F-TL50 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S643232H-TL50 | 64Mb H-die (x32) SDRAM Specification | Samsung semiconductor | | |
K4S643232H-TL50 | 64Mb H-die (x32) SDRAM Specification | Samsung semiconductor | | |
K4E661612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung semiconductor | | |
K4E641612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung semiconductor | | |
K4F661612B-TL50 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power | Samsung semiconductor | | |
K4F641612B-TL50 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power | Samsung semiconductor | | |
K4F661612C-TL50 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power | Samsung semiconductor | | |
ZTL50-X | 1 WATT ZENER DIODE | Frontier Electronics. | | |
ZTL50-Y | 1 WATT ZENER DIODE | Frontier Electronics. | | |
ZTL50-Z | 1 WATT ZENER DIODE | Frontier Electronics. | | |
TL500 | PULSE-WIDTH-MODULATION CONTROL CIRCUITS | Texas Instruments | | |
AG-TL500 | VHS Time-Lapse Video Cassette Recorder | Panasonic Semiconductor | | |
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