| Компонент | Описание | Производитель | PDF | Buy |
| AQV258 | HE (High-function Economy) Type [1-Channel (Form A) Type] | Nais(Matsushita Electric Works) |  |  |
| KDV258 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) | KEC(Korea Electronics) | | |
| XR17V258 | 66MHZ PCI BUS OCTAL UART WITH POWER MANAGEMENT SUPPORT | Exar Corporation | | |
| XR17V258 | 66MHZ PCI BUS OCTAL UART WITH POWER MANAGEMENT SUPPORT | Exar Corporation | | |
| H57V2582GTR-60C | 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O | Hynix Semiconductor | | |
| H57V2582GTR-60I | 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O | Hynix Semiconductor | | |
| H57V2582GTR-60J | 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O | Hynix Semiconductor | | |
| H57V2582GTR-60L | 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O | Hynix Semiconductor | | |
| H57V2582GTR-75C | 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O | Hynix Semiconductor | | |
| H57V2582GTR-75I | 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O | Hynix Semiconductor | | |
| H57V2582GTR-75J | 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O | Hynix Semiconductor | | |
| H57V2582GTR-75L | 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O | Hynix Semiconductor | | |
| AQV258A | HE (High-function Economy) Type [1-Channel (Form A) Type] | Nais(Matsushita Electric Works) | | |
| AQV258AX | HE (High-function Economy) Type [1-Channel (Form A) Type] | Nais(Matsushita Electric Works) | | |
| AQV258AZ | HE (High-function Economy) Type [1-Channel (Form A) Type] | Nais(Matsushita Electric Works) | | |
| KDV258E | SILICON EPITAXIAL PLANAR DIODE | KEC(Korea Electronics) | | |
| XR17V258IV | 66MHZ PCI BUS OCTAL UART WITH POWER MANAGEMENT SUPPORT | Exar Corporation | | |
| XR17V258IV | 66MHZ PCI BUS OCTAL UART WITH POWER MANAGEMENT SUPPORT | Exar Corporation | | |
| XR17V258_08 | 66MHZ PCI BUS OCTAL UART WITH POWER MANAGEMENT SUPPORT | Exar Corporation | | |
