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Компонент | Описание | Производитель | PDF | Buy |
A1373LKBTI | HIgh Precision, Output Pin Programmable Linear Hall Effect Sensors | Allegro MicroSystems | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
A1373LKBTI | High Precision, Output Pin Programmable Linear Hall Effect Sensors | Allegro MicroSystems | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
A1373EKBTI | HIgh Precision, Output Pin Programmable Linear Hall Effect Sensors | Allegro MicroSystems | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
A1374LKBTI | HIgh Precision, Output Pin Programmable Linear Hall Effect Sensors | Allegro MicroSystems | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
A1374EKBTI | HIgh Precision, Output Pin Programmable Linear Hall Effect Sensors | Allegro MicroSystems | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
A1374LKBTI | High Precision, Output Pin Programmable Linear Hall Effect Sensors | Allegro MicroSystems | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
A1374EKBTI | High Precision, Output Pin Programmable Linear Hall Effect Sensors | Allegro MicroSystems | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
A1373EKBTI | High Precision, Output Pin Programmable Linear Hall Effect Sensors | Allegro MicroSystems | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
EDD2516AKTA-6BTI | 256M bits DDR SDRAM WTR (Wide Temperature Range) | Elpida Memory | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
EDD5108ADTA-6BTI | 512M bits DDR SDRAM WTR (Wide Temperature Range) | Elpida Memory | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
EDD5108ADTA-7BTI | 512M bits DDR SDRAM WTR (Wide Temperature Range) | Elpida Memory | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
EDD5116ADTA-7BTI | 512M bits DDR SDRAM WTR (Wide Temperature Range) | Elpida Memory | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM681002BTI-10 | 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MX26C1000BTI-10 | 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM | Macronix International | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MX26C2000BTI-10 | 2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM | Macronix International | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MX26C4000BTI-10 | 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM | Macronix International | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MX29LA128MBTI-10 | 128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY | Macronix International | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MX29GL033MBTI-10G | 128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY | Macronix International | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MX29VL320MBTI-10G | 128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY | Macronix International | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MX29GL320MBTI-10G | 128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY | Macronix International | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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