Компонент | Описание | Производитель | PDF | Buy |
KM416RD8AS-SCM80 | 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
2CM80-100 | British Dimension HRCII-C Fuses | Littelfuse | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BCM800 | CryptoNetX-TM SSL800 ACCELERATOR ADAPTER | Broadcom Corporation. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
TCM8000 | CELLULAR TELEPHONE AUDIO PROCESSOR | Texas Instruments | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
TPCM8001-H | High Speed and High Efficiency DC-DC Converters, Notebook PC Applications, Portable Equipment Applications | Toshiba Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
TPCM8001-H | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) | Toshiba Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
TPCM8001-H_07 | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) | Toshiba Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BCM8002 | FOUR-CHANNEL 3.125 GIGABIT ETHERNET CMOS TRANSCEIVER | Broadcom Corporation. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
TCM8002 | DATA PROCESSOR FOR CELLULAR TELEPHONE | Texas Instruments | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
TCM8002FR | DATA PROCESSOR FOR CELLULAR TELEPHONE | Texas Instruments | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
TPCM8006 | Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) | Toshiba Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CM800DU-12H | Dual IGBTMOD 800 Amperes/600 Volts | Powerex Power Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CM800DY-24S | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CM800DY-24S | Powerex Dual IGBTMOD Modules are designed for use in switching applications. | Powerex Power Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE | Powerex Power Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CM800DZB-34N | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CM800E2C-66H | 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules | Mitsubishi Electric Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CM800E2Z-66H | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CM800E6C-66H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |