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![](/forums/images/ca_evo_db/misc/spacer.gif) | CT990 DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
CT9 | Wet Tantalum Capacitors with Glass to Tantalum Hermetic Seal, Sintered Anode TANTALEX Capacitors | Vishay Siliconix | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *CT9*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
CT9 | Wet Tantalum Capacitors with Glass to Tantalum Hermetic Seal, Sintered Anode TANTALEX Capacitors | Vishay Siliconix | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CR16HCT9 | CR16MCT9/CR16MCT5/CR16HCT9/CR16HCT5 16-Bit Reprogrammable/ROM Microcontroller | National Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CR16MCT9 | CR16MCT9/CR16MCT5/CR16HCT9/CR16HCT5 16-Bit Reprogrammable/ROM Microcontroller | National Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R761869A-FCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R761869A-GCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR16R1624EG0-CT9 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR16R1628EG0-CT9 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR16R162GEG0-CT9 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624EG0-CT9 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1628AF1-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1628EG0-CT9 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R1624AF1-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R326GAG0-CT9 | (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R162GAF0-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR18R162GEG0-CT9 | Key Timing Parameters | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
TS2931CT9.0 | 100mA Ultra Low Dropout Positive Voltage Regulator | Taiwan Semiconductor Company, Ltd | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
ACT90 | miniature surface mount Watch Crystal | Advanced Crystal Technology | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
TS2931CT90 | 100mA Ultra Low Dropout Positive Voltage Regulator | Taiwan Semiconductor Company, Ltd | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
AM29DL322CT90 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory | Advanced Micro Devices | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
AM29DL323CT90 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory | Advanced Micro Devices | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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