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Компонент | Описание | Производитель | PDF | Buy |
FQD2N50 | 500V N-Channel MOSFET | Fairchild Semiconductor | | |
MTD2N50 | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT | Motorola, Inc | | |
STD2N50 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics | | |
STD2N50-1 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STMicroelectronics | | |
FQD2N50B | 500V N-Channel MOSFET | Fairchild Semiconductor | | |
MTD2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM | Motorola, Inc | | |
PHD2N50E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors | | |
ML336RAD2N5JLZ | High-Reliability Chip Inductors | Coilcraft lnc. | | |
ST336RAD2N5JLZ | Chip Inductors for Critical Applications | Coilcraft lnc. | | |
AE336RAD2N5JSZ | Outgassing Compliant Chip Inductors | Coilcraft lnc. | | |
MS336RAD2N5JSZ | High Reliability Chip Inductors | Coilcraft lnc. | | |
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