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Компонент | Описание | Производитель | PDF | Buy |
EF89 | PENTODE WITH VARIABLE MUTUAL CONDUCTANCE FOR USE AS R.F. or I.F. AMPLIFIER | NXP Semiconductors | | |
UF89 | R.F. PENTODE | NXP Semiconductors | | |
UBF89 | DOUBLE DIODE-PENTODE | NXP Semiconductors | | |
UBF89 | DOUBLE DIODE-PENTODE | NXP Semiconductors | | |
F890 | Axial Lead and Cartridge Fuses - Subminiature | Littelfuse | | |
MRF890 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor | | |
MRF890 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor | | |
SRAF890 | Isolation 8.0 AMPS. Schottky Barrier Rectifiers | Taiwan Semiconductor Company, Ltd | | |
SRAF890 | Isolated 8.0 AMPS. Schottky Barrier Rectifiers | Taiwan Semiconductor Company, Ltd | | |
SRAF890 | Isolated 8.0 AMPS. Schottky Barrier Rectifiers | Taiwan Semiconductor Company, Ltd | | |
ASIMRF890 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor | | |
F890-ND | Axial Lead and Cartridge Fuses - Subminiature | Littelfuse | | |
TMF8901B | Si RF LDMOS Transistor | AUK corp | | |
TMF8901F | Si RF LDMOS Transistor | AUK corp | | |
MBRF890CT | Isolated 8.0 AMPS. Schottky Barrier Rectifiers | Taiwan Semiconductor Company, Ltd | | |
MBRF890CT | 8.0 AMPS. Isolated Schottky Barrier Rectifiers | Taiwan Semiconductor Company, Ltd | | |
MRF890_07 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor | | |
F891 | Axial Lead and Cartridge Fuses - Subminiature | Littelfuse | | |
MRF891 | RF POWER TRANSISTORS NPN SILICON | Motorola, Inc | | |
F891-ND | Axial Lead and Cartridge Fuses - Subminiature | Littelfuse | | |
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