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| Результаты поиска для FD115 | |
| Компонент | Описание | Производитель | PDF | Buy |
| E3T-FD11 | Photoelectric Sensor with Built-in Amplifier (Ultracompact and Thin Type) | Omron Electronics LLC |  |  |
| 2.5MSFD11 | Minimodul-Steckverbinder, Raster 2,5 mm | Lumberg | | |
| IRFD110 | 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
| IRFD110 | Power MOSFET | Vishay Siliconix | | |
| IRFD110 | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) | International Rectifier | | |
| SIHFD110 | Power MOSFET | Vishay Siliconix | | |
| SIHFD110-E3 | Power MOSFET | Vishay Siliconix | | |
| IRFD110PBF | Power MOSFET | Vishay Siliconix | | |
| IRFD110PBF | HEXFET Power MOSFET | International Rectifier | | |
| 380FD111B10 | EMI/RFI Non-Environmental Backshell with Strain Relief | Glenair, Inc. | | |
| 380FD111B12 | EMI/RFI Non-Environmental Backshell with Strain Relief | Glenair, Inc. | | |
| 380FD111B14 | EMI/RFI Non-Environmental Backshell with Strain Relief | Glenair, Inc. | | |
| 380FD111B16 | EMI/RFI Non-Environmental Backshell with Strain Relief | Glenair, Inc. | | |
| 380FD111B18 | EMI/RFI Non-Environmental Backshell with Strain Relief | Glenair, Inc. | | |
| 380FD111B20 | EMI/RFI Non-Environmental Backshell with Strain Relief | Glenair, Inc. | | |
| 380FD111B22 | EMI/RFI Non-Environmental Backshell with Strain Relief | Glenair, Inc. | | |
| 380FD111B24 | EMI/RFI Non-Environmental Backshell with Strain Relief | Glenair, Inc. | | |
| 380FD111B28 | EMI/RFI Non-Environmental Backshell with Strain Relief | Glenair, Inc. | | |
| MC18FD111J-F | Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option | Cornell Dubilier Electronics | | |
| MC12FD111J-F | Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option | Cornell Dubilier Electronics | | |
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