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Компонент | Описание | Производитель | PDF | Buy |
SDHN7.5K | STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS | Semtech Corporation | | |
PHN70308 | N-channel enhancement mode TrenchMOS transistor array | NXP Semiconductors | | |
IRHN7054 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | International Rectifier | | |
PHN708 | 7 N-channel 80 mohm FET array enhancement mode MOS transistors | NXP Semiconductors | | |
IRHN7130 | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) | International Rectifier | | |
RHN7150 | TRANSISTOR N-CHANNEL | International Rectifier | | |
IRHN7150 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | International Rectifier | | |
IRHN7230 | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) | International Rectifier | | |
IRHN7250 | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A) | International Rectifier | | |
IRHN7250SE | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | International Rectifier | | |
IRHN7450 | HEXFET TRANSISTOR | International Rectifier | | |
IRHN7450SE | TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A) | International Rectifier | | |
K4S563233FHN75 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | Samsung semiconductor | | |
K4S64323LH-HN75 | 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | Samsung semiconductor | | |
IRHN7C50SE | TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) | International Rectifier | | |
HN7G01FE | Power Management Switch Applications | Toshiba Semiconductor | | |
HN7G01FU | TOSHIBA Multi Chip Discrete Device | Toshiba Semiconductor | | |
HN7G01FU | Power Management Switch Application | Toshiba Semiconductor | | |
HN7G01FU_07 | Power Management Switch Application | Toshiba Semiconductor | | |
HN7G02FE | Power Management Switch Applications, Inverter Circuit | Toshiba Semiconductor | | |
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