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| IRF3306 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
IRF330 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |  |  |
| *IRF33*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRF330 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF330 | N-Channel Power MOSFETs, 5.5A, 350 V/400V | Fairchild Semiconductor | | |
| IRF330 | 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
| IRF330 | TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A) | International Rectifier | | |
| IRF330-333 | N-Channel Power MOSFETs, 5.5A, 350 V/400V | Fairchild Semiconductor | | |
| IRF3305 | AUTOMOTIVE MOSFET | International Rectifier | | |
| IRF3305PBF | HEXFET^ Power MOSFET | International Rectifier | | |
| IRF331 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF331 | N-Channel Power MOSFETs, 5.5A, 350 V/400V | Fairchild Semiconductor | | |
| IRF3315 | Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A) | International Rectifier | | |
| IRF3315L | Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A) | International Rectifier | | |
| IRF3315LPBF | HEXFET Power MOSFET | International Rectifier | | |
| IRF3315PBF | HEXFET Power MOSFET | International Rectifier | | |
| IRF3315S | Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A) | International Rectifier | | |
| IRF3315SPBF | HEXFET Power MOSFET | International Rectifier | | |
| IRF332 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF332 | N-Channel Power MOSFETs, 5.5A, 350 V/400V | Fairchild Semiconductor | | |
| IRF333 | N-Channel Power MOSFETs, 5.5A, 350 V/400V | Fairchild Semiconductor | | |
| IRF333 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
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