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| Результаты поиска для IRF53N06 | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRF530 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | Motorola, Inc |  |  |
| IRF530 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics | | |
| IRF530 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE | Transys Electronics | | |
| IRF530 | N-Channel Power MOSFETs, 20 A, 60-100 V | Fairchild Semiconductor | | |
| IRF530 | Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) | International Rectifier | | |
| IRF530 | N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STMicroelectronics | | |
| IRF530 | N-Channel Power MOSFETs Avalanche Energy Rated | Harris Corporation | | |
| IRF530 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF530 | N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET | STMicroelectronics | | |
| IRF530 | Power MOSFET | Vishay Siliconix | | |
| IRF5305 | Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) | International Rectifier | | |
| IRF5305 | HEXFET^ Power MOSFET | ShenZhen FreesCale Electronics. Co., Ltd | | |
| IRF5305L | HEXFET^ Power MOSFET | ShenZhen FreesCale Electronics. Co., Ltd | | |
| IRF5305L | Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) | International Rectifier | | |
| IRF5305LPBF | HEXFET Power MOSFET | International Rectifier | | |
| IRF5305PBF | HEXFET Power MOSFET | International Rectifier | | |
| IRF5305S | Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) | International Rectifier | | |
| IRF5305S | HEXFET^ Power MOSFET | ShenZhen FreesCale Electronics. Co., Ltd | | |
| IRF5305SPBF | HEXFET Power MOSFET | International Rectifier | | |
| IRF530A | Advanced Power MOSFET | Fairchild Semiconductor | | |
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