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| IRF9132 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
IRF9132 | P-CHANNEL POWER MOSFETS | Samsung semiconductor |  |  |
| *IRF913*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRF9130 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF9130 | P-CHANNEL POWER MOSFET | Seme LAB | | |
| IRF9130 | -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET | Intersil Corporation | | |
| IRF9130 | PCHANNEL POWER MOSFET | Seme LAB | | |
| IRF9130 | TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A) | International Rectifier | | |
| IRF9130SMD | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | Seme LAB | | |
| IRF9130SMD05 | P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS | Seme LAB | | |
| IRF9130_03 | PCHANNEL POWER MOSFET | Seme LAB | | |
| IRF9131 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF9132 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF9133 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
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