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| IRFZ45N DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
IRFZ45 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |  |  |
| *IRFZ4*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRFZ40 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STMicroelectronics | | |
| IRFZ40 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRFZ40 | Power MOSFET | Vishay Siliconix | | |
| IRFZ40 | Power Field Effect Transistors | Motorola, Inc | | |
| IRFZ40FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STMicroelectronics | | |
| IRFZ40PBF | Power MOSFET | Vishay Siliconix | | |
| IRFZ42 | Power Field Effect Transistors | Motorola, Inc | | |
| IRFZ42 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRFZ44 | N-channel enhancement mode TrenchMOS transistor | NXP Semiconductors | | |
| IRFZ44 | Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) | International Rectifier | | |
| IRFZ44 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRFZ44 | Power MOSFET | Vishay Siliconix | | |
| IRFZ44 | Power MOSFET | Vishay Siliconix | | |
| IRFZ44 | Power MOSFET | Vishay Siliconix | | |
| IRFZ44CN | isc N-Channel MOSFET Transistor | Inchange Semiconductor Company Limited | | |
| IRFZ44E | Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) | International Rectifier | | |
| IRFZ44EL | Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) | International Rectifier | | |
| IRFZ44ELPBF | HEXFET^ Power MOSFET | International Rectifier | | |
| IRFZ44EPBF | HEXFET^ Power MOSFET | International Rectifier | | |
| IRFZ44ES | Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) | International Rectifier | | |
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