Компонент | Описание | Производитель | PDF | Buy |
HJ350 | PNP EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
2SJ350 | Silicon P-Channel MOS FET | Hitachi Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
2SJ350 | Silicon P Channel MOS FET | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MSJ350 | a long sevice life battery up to 20years expected life under normal float charge | CSB Battery Co., Ltd. | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SPFJ350 | SPFJ SERIES FUSE | Littelfuse | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SMCJ350 | Surface Mount TVS | Shenzhen Luguang Electronic Technology Co., Ltd | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
15FMCJ350 | SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR | Rectron Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
P4FMAJ350 | GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) | Rectron Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
P4FMAJ350 | SURFACE MOUNT GPP TRANSIENT VOLTAGE SUPPRESSOR 400 WATT PEAK POWER 1.0 WATTS STEADY STATE | Rectron Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRFK4J350 | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRFK6J350 | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
P6FMBJ350 | GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE) | Rectron Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NX8560SJ350-BC | NECs EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NX8560LJ350-BC | NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE IN BUTTERFLY PACKAGE WITH GPO CONNECTOR FOR 10 Gb/s DWDM APPLICATIONS | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NX8560LJ350-CC | NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE IN BUTTERFLY PACKAGE WITH GPO CONNECTOR FOR 10 Gb/s DWDM APPLICATIONS | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NX8560SJ350-CC | NECs EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
2SJ350-E | Silicon P Channel MOS FET | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CMJ3500 | SURFACE MOUNT SILICON CURRENT LIMITING DIODE | Central Semiconductor Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
GBJ35005 | Single Phase Bridge Rectifiers | Sirectifier Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
GBJ35005 | 35 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts | Micro Commercial Components | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |