| Компонент | Описание | Производитель | PDF | Buy |
| 2SJ351 | Silicon P-Channel MOS FET | Hitachi Semiconductor |  |  |
| 2SJ351 | Silicon P Channel MOS FET | Renesas Technology Corp | | |
| CSNJ351 | Solid State Sensors Closed Loop Current Sensors | Honeywell Solid State Electronics Center | | |
| 2SJ351-E | Silicon P Channel MOS FET | Renesas Technology Corp | | |
| GBJ3510 | 35 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| GBJ3510 | Single-Phase Glass Passivated Bridge Rectifier | TAITRON Components Incorporated | | |
| GBJ3510 | Single Phase Bridge Rectifiers | Sirectifier Semiconductors | | |
| GBJ3510 | 35 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| GBJ3510 | 35 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| 527T123J3510 | Solid EMI/RFI Strain-Relief Backshell | Glenair, Inc. | | |
| GBJ3510-BP | 35 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts | Micro Commercial Components | | |
| DMJ3517 | Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes | List of Unclassifed Manufacturers | | |
| LNJ351C4GRA | Surface mounting monocolor visible light emitting diode. Outline (3.2x2.0mm Type) | Panasonic Semiconductor | | |
| 350GJ351U060C | 105 ЉC, Low Inductance, Radial, Aluminum Electrolytic | List of Unclassifed Manufacturers | | |
| 350GJ351U060C | Low Inductance, Radial, Aluminum Electrolytic High Frequency, Solid Aluminum Top | Cornell Dubilier Electronics | | |
