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28C64AJC-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | List of Unclassifed Manufacturers | | |
28LV64JC-4 | Speed: 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | List of Unclassifed Manufacturers | | |
28C64AJC-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | List of Unclassifed Manufacturers | | |
28LV64JC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | List of Unclassifed Manufacturers | | |
28C256AJC-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | List of Unclassifed Manufacturers | | |
28LV256JC-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | List of Unclassifed Manufacturers | | |
28C256AJC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | List of Unclassifed Manufacturers | | |
28LV256JC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | List of Unclassifed Manufacturers | | |
HSP48212JC-40 | Digital Video Mixer | Intersil Corporation | | |
HSP48410JC-40 | Histogrammer/Accumulating Buffer | Intersil Corporation | | |
UT51C161JC-40 | 64K WORD X 16 BIT EDO DRAM | List of Unclassifed Manufacturers | | |
UT51C164JC-40 | 256K X 16 BIT EDO DRAM | List of Unclassifed Manufacturers | | |
UT51L164JC-40 | Access time: 40 ns, 256 K x 16 Bit EDO DRAM | List of Unclassifed Manufacturers | | |
HMU16JC-45 | 16 x 16-Bit CMOS Parallel Multipliers | Intersil Corporation | | |
HMU17JC-45 | 16 x 16-Bit CMOS Parallel Multipliers | Intersil Corporation | | |
HMA510JC-45 | 16 x 16-Bit CMOS Parallel Multiplier Accumulator | Intersil Corporation | | |
K4F640811B-JC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung semiconductor | | |
K4F660811B-JC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung semiconductor | | |
K4E640812B-JC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | | |
K4E660812B-JC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung semiconductor | | |