Компонент | Описание | Производитель | PDF | Buy |
FD400K4E | RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc | List of Unclassifed Manufacturers | | |
K4E151611 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E151611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
K4E151612D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E151612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
K4E160411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
K4E160412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
K4E160412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |