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| K6R1008C1B-JC10 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
K6R1008C1B-JC10 | 128K x 8 high speed static RAM, 5V operating, 10ns | Samsung semiconductor |  |  |
| *K6R1008C1B-*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| K6R1008C1B- | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | | |
| K6R1008C1B-C10 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | | |
| K6R1008C1B-C12 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | | |
| K6R1008C1B-C8 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | | |
| K6R1008C1B-I10 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | | |
| K6R1008C1B-I12 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | | |
| K6R1008C1B-I8 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | | |
| K6R1008C1B-JC10 | 128K x 8 high speed static RAM, 5V operating, 10ns | Samsung semiconductor | | |
| K6R1008C1B-JC12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung semiconductor | | |
| K6R1008C1B-JC8 | 128K x 8 high speed static RAM, 5V operating, 8ns | Samsung semiconductor | | |
| K6R1008C1B-JI10 | 128K x 8 high speed static RAM, 5V operating, 10ns | Samsung semiconductor | | |
| K6R1008C1B-JI12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung semiconductor | | |
| K6R1008C1B-JI8 | 128K x 8 high speed static RAM, 5V operating, 8ns | Samsung semiconductor | | |
| K6R1008C1B-TC10 | 128K x 8 high speed static RAM, 5V operating, 10ns | Samsung semiconductor | | |
| K6R1008C1B-TC12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung semiconductor | | |
| K6R1008C1B-TC8 | 128K x 8 high speed static RAM, 5V operating, 8ns | Samsung semiconductor | | |
| K6R1008C1B-TI10 | 128K x 8 high speed static RAM, 5V operating, 10ns | Samsung semiconductor | | |
| K6R1008C1B-TI12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung semiconductor | | |
| K6R1008C1B-TI8 | 128K x 8 high speed static RAM, 5V operating, 8ns | Samsung semiconductor | | |
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