| Компонент | Описание | Производитель | PDF | Buy |
| 3N165 | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET | Linear Integrated Systems |  |  |
| 3N165 | N-CHANNEL JFET | Intersil Corporation | | |
| 3N165 | (SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT | New Jersey Semi-Conductor Products, Inc. | | |
| AN165 | EMI REDUCTION TECHNIQUES | List of Unclassifed Manufacturers | | |
| X3N165 | 40 V, monolithic dual P-Channel enhancement mode JFET general purpose amplifier | Calogic, LLC | | |
| PSMN165-200K | N-channel enhancement mode field-effect transistor | NXP Semiconductors | | |
| PSMN165-200K | N-channel TrenchMOS SiliconMAX standard level FET | NXP Semiconductors | | |
| 3N165-6 | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET | Linear Integrated Systems | | |
| LBN16504 | 165MHz SAW Filter 20MHz Bandwidth | SIPAT Co,Ltd | | |
| LBN16504_10 | 165MHz SAW Filter 20MHz Bandwidth | SIPAT Co,Ltd | | |
| 2N1651 | DAP transistors are de-signed for efficient high current switching at high frequencies | New Jersey Semi-Conductor Products, Inc. | | |
| SCAN16512 | Low Voltage Universal 16-bit IEEE 1149.1 Bus Transceiver with TRI-STATE Outputs | National Semiconductor | | |
| SCAN16512A | Low Voltage Universal 16-bit IEEE 1149.1 Bus Transceiver with TRI-STATE Outputs | Texas Instruments | | |
| 2N1652 | DAP transistors are de-signed for efficient high current switching at high frequencies | New Jersey Semi-Conductor Products, Inc. | | |
| XC61FN1652LB | Voltage Detectors, Delay Circuit Built-In | Torex Semiconductor | | |
| XC61FN1652LB | Voltage Detectors, Delay Circuit Built-In | Torex Semiconductor | | |
| XC61FN1652LH | Voltage Detectors, Delay Circuit Built-In | Torex Semiconductor | | |
| XC61FN1652LH | Voltage Detectors, Delay Circuit Built-In | Torex Semiconductor | | |
| XC61FN1652LL | Voltage Detectors, Delay Circuit Built-In | Torex Semiconductor | | |
| XC61FN1652LL | Voltage Detectors, Delay Circuit Built-In | Torex Semiconductor | | |
