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| Результаты поиска для ND042 | |
| Компонент | Описание | Производитель | PDF | Buy |
| FBR18ND04 | MINIATURE RELAY (SURFACE MOUNT TYPE) 2 POLES-1 to 2 A (FOR SIGNAL SWITCHING) | Fujitsu Component Limited. |  |  |
| FBR18ND04-P | MINIATURE RELAY (SURFACE MOUNT TYPE) 2 POLES-1 to 2 A (FOR SIGNAL SWITCHING) | Fujitsu Component Limited. | | |
| PM-IND040 | COUPLED INDUCTOR For Uses in ADSL POTS Low Pass Filters | Premier Magnetics, Inc. | | |
| PM-IND040E | COUPLED INDUCTOR For Uses in ADSL POTS Low Pass Filters | Premier Magnetics, Inc. | | |
| PM-IND045 | COUPLED INDUCTOR For Uses in ADSL POTS Low Pass Filters | Premier Magnetics, Inc. | | |
| PM-IND045E | COUPLED INDUCTOR For Uses in ADSL POTS Low Pass Filters | Premier Magnetics, Inc. | | |
| NAND04G-B2D | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GA3C2A | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GA3C2AN1E | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GA3C2AN1F | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GA3C2AN6E | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GA3C2AN6F | 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory | STMicroelectronics | | |
| NAND04GR3B2CN1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CN6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CN6F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CZL1E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CZL1F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CZL6E | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2CZL6F | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
| NAND04GR3B2D | 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories | Numonyx B.V | | |
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