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| Результаты поиска для RF9282E6.3 | |
| Компонент | Описание | Производитель | PDF | Buy |
| MRF9200LR3 | N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc |  |  |
| MRF9200LR3 | 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
| MRF9200LR3_06 | 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
| MRF9200LSR3 | 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
| MRF9200LSR3 | N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
| MRF9210 | RF Power Field Effect Transistor | Motorola, Inc | | |
| MRF9210R3 | RF Power Field Effect Transistor | Motorola, Inc | | |
| IRF9230 | P-CHANNEL POWER MOSFET | Seme LAB | | |
| IRF9230 | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs | Intersil Corporation | | |
| IRF9230 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF9230 | TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) | International Rectifier | | |
| IRF9231 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF9231 | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs | Intersil Corporation | | |
| IRF9232 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF9232 | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs | Intersil Corporation | | |
| IRF9233 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF9233 | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs | Intersil Corporation | | |
| IRF9240 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
| IRF9240 | P-CHANNEL POWER MOSFET | Seme LAB | | |
| IRF9240 | PCHANNEL POWER MOSFET | Seme LAB | | |
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