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| TC8066PB DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
TC80 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | | |
| *TC80*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
TC80 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | | |
GE28F160C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | | |
GE28F640C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | | |
RC28F160C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | | |
RC28F640C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | | |
TE28F160C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | | |
TE28F160B3TC80 | 3 Volt Advanced Boot Block Flash Memory | Intel Corporation | | |
TE28F640C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | | |
GE28F160B3TC80 | 3 Volt Advanced Boot Block Flash Memory | Intel Corporation | | |
GT28F128W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | | |
GT28F320W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | | |
GE28F128W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | | |
GE28F320W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | | |
K4S161622H-TC80 | 16Mb H-die SDRAM Specification | Samsung semiconductor | | |
K4S161622E-TC80 | 1M x 16 SDRAM | Samsung semiconductor | | |
K4S280832B-TC80 | 4M x 8Bit x 4 Banks Sychronous DRAM | Samsung semiconductor | | |
K4S281632M-TC80 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S643232C-TC80 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
GE28F640W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | | |
K4S281632B-TC80 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
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