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Компонент | Описание | Производитель | PDF | Buy |
K4D551638D-TC45 | 256Mbit GDDR SDRAM | Samsung semiconductor | | |
K4E641612C-TC45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612C-TC45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4S643232F-TC45 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S643232E-TC45 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4E641612B-TC45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung semiconductor | | |
K4E661612B-TC45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung semiconductor | | |
K4F641612B-TC45 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns | Samsung semiconductor | | |
K4F661612B-TC45 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns | Samsung semiconductor | | |
K4F641612C-TC45 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns | Samsung semiconductor | | |
K4F661612C-TC45 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns | Samsung semiconductor | | |
WTC4501 | N-Channel Enhancement Mode Power MOSFET | Weitron Technology | | |
MTC4501Q8 | N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Cystech Electonics Corp. | | |
MTC4503Q8 | N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Cystech Electonics Corp. | | |
BTC4505A3 | High Voltage NPN Epitaxial Planar Transistor | Cystech Electonics Corp. | | |
BTC4505M3 | High Voltage NPN Epitaxial Planar Transistor | Cystech Electonics Corp. | | |
BTC4505N3 | High Voltage Transistor (NPN) | Comchip Technology | | |
BTC4505N3 | High Voltage NPN Epitaxial Planar Transistor | Cystech Electonics Corp. | | |
MTC4505Q8 | N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Cystech Electonics Corp. | | |
LTC450U | Filter SMD, Ceramic | auris-GmbH | | |
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