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Компонент | Описание | Производитель | PDF | Buy |
PTF191601 | LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz | Infineon Technologies AG | | |
PTF191601E | LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz | Infineon Technologies AG | | |
PTF191601E | Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz | Infineon Technologies AG | | |
PTF191601F | Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz | Infineon Technologies AG | | |
VTF193BX | Conformal, Single In-Line Resistor Networks (Standard) | Vishay Siliconix | | |
STF19NM50N | N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247 | STMicroelectronics | | |
STF19NM65N | N-channel 650 V - 0.25 Y - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh Power MOSFET | STMicroelectronics | | |
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