| Компонент | Описание | Производитель | PDF | Buy |
| K4E640412E-TI60 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor |  |  |
| K4E660412E-TI60 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4S643232E-TI60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
| K4S643232F-TI60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V | Samsung semiconductor | | |
| LTI602 | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI602F | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI602FT | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI602T | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI602UF | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI602UFT | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI606 | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI606F | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI606FT | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI606T | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI606UF | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| LTI606UFT | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
| 3R3TI60E-080 | DIODE and TYRISTOR MODULE | Fuji Electric | | |
| STI60N55F3 | N-channel 55 V, 6.5 mY, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET | STMicroelectronics | | |
| 4R3TI60Y-080 | DIODE and TYRISTOR MODULE | Fuji Electric | | |
| LTI610 | 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time | Voltage Multipliers Inc. | | |
