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Компонент | Описание | Производитель | PDF | Buy |
3FTL6 | through-hole or SMD / 50mA/24VDC / single pole/momentary | List of Unclassifed Manufacturers | | |
3FTL6 | through-hole or SMD | List of Unclassifed Manufacturers | | |
11TL60 | Door Interlock Switches | ITT Industries | | |
12TL60 | Door Interlock Switches | ITT Industries | | |
23TL60 | Door Interlock Switches | ITT Industries | | |
K4S561632E-TL60 | 256Mb E-die SDRAM Specification | Samsung semiconductor | | |
K4S641632E-TL60 | 64Mbit SDRAM | Samsung semiconductor | | |
K4S641632F-TL60 | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S641632H-TL60 | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free | Samsung semiconductor | | |
K4S643232E-TL60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S643232F-TL60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S643232H-TL60 | 64Mb H-die (x32) SDRAM Specification | Samsung semiconductor | | |
K4S643232H-TL60 | 64Mb H-die (x32) SDRAM Specification | Samsung semiconductor | | |
K4S643232C-TL60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4E641612C-TL60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4E661612C-TL60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
K4S281632E-TL60 | 128Mb E-die SDRAM Specification | Samsung semiconductor | | |
K4S281632F-TL60 | 128Mb F-die SDRAM Specification | Samsung semiconductor | | |
K4E641612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung semiconductor | | |
K4E661612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung semiconductor | | |
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