| Компонент | Описание | Производитель | PDF | Buy |
| H01N60 | N-Channel Power Field Effect Transistor | Hi-Sincerity Mocroelectronics |  |  |
| M01N60 | N Channel MOSFET | List of Unclassifed Manufacturers | | |
| M01N60 | N Channel MOSFET | Stanson Technology | | |
| GI01N60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM CORPORATION | | |
| GI01N60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | List of Unclassifed Manufacturers | | |
| GJ01N60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM CORPORATION | | |
| CMT01N60 | POWER FIELD EFFECT TRANSISTOR | List of Unclassifed Manufacturers | | |
| CMT01N60 | POWER FIELD EFFECT TRANSISTOR | Champion Microelectronic Corp. | | |
| CMT01N60 | POWER FIELD EFFECT TRANSISTOR | Champion Microelectronic Corp. | | |
| NDD01N60 | N-Channel Power MOSFET 600 V, 8.5 ohm | ON Semiconductor | | |
| NDT01N60 | N-Channel Power MOSFET 600 V, 8.5 ohm | ON Semiconductor | | |
| SSD01N60 | N-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
| SSM01N60 | N-CHANNEL ENHANCEMENT-MODE POWER MOSFET | List of Unclassifed Manufacturers | | |
| SID01N60 | N-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
| SJV01N60 | 1A , 600V , RDS(ON) 10 m N-Channel Enhancement Mode Power MOSFET | SeCoS Halbleitertechnologie GmbH | | |
| NDD01N60.1G | N-Channel Power MOSFET 600 V, 8.5 ohm | ON Semiconductor | | |
| ACE301N60AM+ | High-precision Low Voltage Detector | ACE Technology Co., LTD. | | |
| ACE301N60AM+H | High-precision Low Voltage Detector | ACE Technology Co., LTD. | | |
| ACE301N60BM+ | High-precision Low Voltage Detector | ACE Technology Co., LTD. | | |
| ACE301N60BM+H | High-precision Low Voltage Detector | ACE Technology Co., LTD. | | |
