| Компонент | Описание | Производитель | PDF | Buy |
| FQB12N20 | 200V N-Channel MOSFET | Fairchild Semiconductor |  |  |
| FQD12N20 | 200V N-Channel MOSFET | Fairchild Semiconductor | | |
| FQP12N20 | 200V LOGIC N-Channel MOSFET | Fairchild Semiconductor | | |
| FQU12N20 | 200V N-Channel MOSFET | Fairchild Semiconductor | | |
| FQU12N20 | 200V LOGIC N-Channel MOSFET | Fairchild Semiconductor | | |
| MTP12N20 | N-Channel Power MOSFETs, 12A, 150-200 V | Fairchild Semiconductor | | |
| RFM12N20 | 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs | Intersil Corporation | | |
| RFP12N20 | 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs | Intersil Corporation | | |
| FQPF12N20 | 200V N-Channel MOSFET | Fairchild Semiconductor | | |
| NM27C512N200 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | National Semiconductor | | |
| NM27P512N200 | 524,288-Bit (64K x 8) Processor Oriented CMOS EPROM | National Semiconductor | | |
| R3112N201A | LOW VOLTAGE DETECTOR WITH OUTPUT DELAY | RICOH electronics devices division | | |
| R3112N201A | MARK INFORMATION ME-R3112N-0310 R3112N SERIES MARK SPECIFICATION | RICOH electronics devices division | | |
| R1112N201A | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1112N201A-TL | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1112N201A-TR | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1112N201B | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1112N201B-TL | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R1112N201B-TR | LOW NOISE 150mA LDO REGULATOR | RICOH electronics devices division | | |
| R3112N201C | MARK INFORMATION ME-R3112N-0310 R3112N SERIES MARK SPECIFICATION | RICOH electronics devices division | | |
