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Компонент | Описание | Производитель | PDF | Buy |
28AHB16V1 | 3-phase bridge rectifier | Semikron International | | |
39AHB16V1 | 3-phase bridge rectifier | Semikron International | | |
K6R4016V1 | 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | | |
SKIIP28AHB16V1 | 3-phase bridge rectifier brake chopper | Semikron International | | |
SKIIP28ANB16V1 | 3-phase bridge rectifier brake chopper | Semikron International | | |
SKIIP39AHB16V1 | 3-phase bridge rectifier brake chopper | Semikron International | | |
SKIIP39ANB16V1 | 3-phase bridge rectifier brake chopper | Semikron International | | |
STEVAL-MKI016V1 | STMICROELECTRONICS Analog ICs | STMicroelectronics | | |
STEVAL-TDR016V1 | RF power amplifier using 1 x PD55015E N-channel enhancement-mode lateral MOSFETs | STMicroelectronics | | |
H1045-00102-16V10 | ISL8225MEVAL2Z 6-Phase, 90A Evaluation Board Setup Procedure | Intersil Corporation | | |
H1045-00102-16V10 | ISL8225MEVAL4Z Dual 15A/Optional 30A Cascadable Evaluation Board Setup Procedure | Intersil Corporation | | |
H1044-00104-16V10-T | 1A Regulator Standard Buck PWM | Intersil Corporation | | |
MPTR16V1000 | Polymeric PTC | MERITEK ELECTRONICS CORPORATION | | |
KM416V1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
KM416V1000BJ-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung semiconductor | | |
KM416V1000BJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung semiconductor | | |
KM416V1000BJ-7 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung semiconductor | | |
KM416V1000BJL-5 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung semiconductor | | |
KM416V1000BJL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung semiconductor | | |
KM416V1000BJL-7 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung semiconductor | | |
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