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| 1920A20 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
1920A20 | 20 W, 25 V, 1930-1990 MHz common emitter transistor | GHz Technology |  |  |
| *1920A*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| MGFL45V1920A | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET | Mitsubishi Electric Semiconductor | | |
| MGFL45V1920A | 1.9-2.0 GHz BAND / 32W | Mitsubishi Electric Semiconductor | | |
| MGFL45V1920A | 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET | Mitsubishi Electric Semiconductor | | |
| SFS1920A-LF | Fixed Frequency Synthesizer Surface Mount Module | Z-Communications, Inc | | |
| SFS1920A-LF_11 | Fixed Frequency Synthesizer Surface Mount Module | Z-Communications, Inc | | |
| ZRO1920A1LF | Voltage-Controlled Oscillator Surface Mount Module | Z-Communications, Inc | | |
| ZRO1920A1LF | Voltage-Controlled Oscillator Surface Mount Module | Z-Communications, Inc | | |
| ZRO1920A1LF_10 | Voltage-Controlled Oscillator Surface Mount Module | Z-Communications, Inc | | |
| 1920A20 | 20 W, 25 V, 1930-1990 MHz common emitter transistor | GHz Technology | | |
| 1920AB12 | 12 W, 25 V, 1930-1990 MHz common emitter transistor | GHz Technology | | |
| MGFL45V1920A_04 | 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET | Mitsubishi Electric Semiconductor | | |
| MGFL45V1920A_11 | 1.9-2.0 GHz BAND / 32W | Mitsubishi Electric Semiconductor | | |
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