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| Результаты поиска для 1N60ES | |
| Компонент | Описание | Производитель | PDF | Buy |
| MTD1N60E | TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM | Motorola, Inc |  |  |
| PHP1N60E | PowerMOS transistor | NXP Semiconductors | | |
| PHX1N60E | PowerMOS transistor Isolated version of PHP1N60E | NXP Semiconductors | | |
| MTA1N60E | FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR | Motorola, Inc | | |
| MTP1N60E | TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM | Motorola, Inc | | |
| FMC11N60E | N-CHANNEL SILICON POWER MOSFET | Fuji Electric | | |
| FMI11N60E | N-CHANNEL SILICON POWER MOSFET | Fuji Electric | | |
| FMV11N60E | N-CHANNEL SILICON POWER MOSFET | Fuji Electric | | |
| MGP11N60E | SHORT CIRCUIT RATED LOW ON-VOLTAGE | ON Semiconductor | | |
| MGP11N60E | Insulated Gate Bipolar Transistor | Motorola, Inc | | |
| MGP21N60E | Insulated Gate Bipolar Transistor | ON Semiconductor | | |
| FMP11N60E | N-CHANNEL SILICON POWER MOSFET | Fuji Electric | | |
| MGP21N60E | Insulated Gate Bipolar Transistor | Motorola, Inc | | |
| MGP11N60ED | SHORT CIRCUIT RATED LOW ON-VOLTAGE | ON Semiconductor | | |
| MGW21N60ED | Insulated Gate Bipolar Transistor | Motorola, Inc | | |
| MGW21N60ED | Insulated Gate Bipolar Transistor | ON Semiconductor | | |
| ACE301N60EP+H | High-precision Low Voltage Detector | ACE Technology Co., LTD. | | |
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