Компонент | Описание | Производитель | PDF | Buy |
P11T0152-200-1.8 | TOROIDAL INDUCTOR | MPS Industries, Inc. | | |
IA-22-200-26MM-R/W/B | Insulated Axial Jumper Wire | Vestal Electronic Devices, LLC | | |
P11T0152-200-3.2 | TOROIDAL INDUCTOR | MPS Industries, Inc. | | |
SST29VE512-200-4C-EH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29LE512-200-4C-EH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29EE512-200-4C-EH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29VE512-200-4C-EN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29LE512-200-4C-EN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29EE512-200-4C-EN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29EE512-200-4C-NH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29LE512-200-4C-NH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29VE512-200-4C-NH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29EE512-200-4C-NN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29LE512-200-4C-NN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29VE512-200-4C-NN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29EE512-200-4C-PH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29LE512-200-4C-PH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29VE512-200-4C-PH | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29EE512-200-4C-PN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |
SST29LE512-200-4C-PN | 512 Kbit (64K x 8) page-mode EEPROM | Silicon Storage Technology, Inc | | |