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| 204CT-4 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
204CT-4 | THERMOPILE TYPE INFRARED SENSOR | List of Unclassifed Manufacturers |  |  |
| *204CT-*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| 204CT-4 | THERMOPILE TYPE INFRARED SENSOR | List of Unclassifed Manufacturers | | |
| KM416V1204CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms | Samsung semiconductor | | |
| KM416C1204CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | | |
| KM416C1204CT-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | | |
| KM416V1204CT-5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | | |
| KM416C1204CT-5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | | |
| KM416V1204CT-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms | Samsung semiconductor | | |
| KM416C1204CT-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | | |
| KM416C1204CT-6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| KM416V1204CT-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| KM416V1204CT-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms | Samsung semiconductor | | |
| KM416C1204CT-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms | Samsung semiconductor | | |
| KM416C1204CT-L45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung semiconductor | | |
| KM416V1204CT-L5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | | |
| KM416C1204CT-L5 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung semiconductor | | |
| KM416V1204CT-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
| KM416C1204CT-L6 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung semiconductor | | |
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