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| 25N10 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
25N10 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Unisonic Technologies |  |  |
| *25N10*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| 25N10 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Unisonic Technologies | | |
| MTM25N10 | POWER FIELD EFFECT TRANSISTOR | Motorola, Inc | | |
| IXFH25N10 | HIPERFET Power MOSFTETs | IXYS Corporation | | |
| 447FH425N10 | EMI/RFI Non-Environmental Band-in-a-Can Backshell With Cable Clamp Strain-Relief | Glenair, Inc. | | |
| 447FJ425N10 | EMI/RFI Non-Environmental Band-in-a-Can Backshell With Cable Clamp Strain-Relief | Glenair, Inc. | | |
| 447FS425N10 | EMI/RFI Non-Environmental Band-in-a-Can Backshell With Cable Clamp Strain-Relief | Glenair, Inc. | | |
| M85049-78-25N10 | EMI/RFI Environmental Backshell | Glenair, Inc. | | |
| M85049-79-25N10 | EMI/RFI Environmental Backshell | Glenair, Inc. | | |
| IXGH25N100 | Low VCE(sat), High speed IGBT | IXYS Corporation | | |
| IXGH25N100 | Low V High speed IGBT | IXYS Corporation | | |
| IXGM25N100 | Low VCE(sat), High speed IGBT | IXYS Corporation | | |
| IXGM25N100 | Low V High speed IGBT | IXYS Corporation | | |
| IXSM25N100 | Low VCE(sat) IGBT, High Speed IGBT | IXYS Corporation | | |
| IXSH25N100 | Low VCE(sat) IGBT, High Speed IGBT | IXYS Corporation | | |
| TP38H125N1002 | 6x6 mm SMT Halogen-Free Tactile Switches | GREATECS | | |
| IXGH25N100A | Low VCE(sat), High speed IGBT | IXYS Corporation | | |
| IXGH25N100A | Low V High speed IGBT | IXYS Corporation | | |
| IXGM25N100A | Low VCE(sat), High speed IGBT | IXYS Corporation | | |
| IXGM25N100A | Low V High speed IGBT | IXYS Corporation | | |
| IXSH25N100A | Low VCE(sat) IGBT, High Speed IGBT | IXYS Corporation | | |
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