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| Результаты поиска для 25N120M | |
| Компонент | Описание | Производитель | PDF | Buy |
| MGY25N120 | Insulated Gate Bipolar Transistor | Motorola, Inc |  |  |
| SGH25N120 | Short Circuit Rated IGBT | Fairchild Semiconductor | | |
| SGW25N120 | Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation | Infineon Technologies AG | | |
| SKW25N120 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SGW25N120 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| MGY25N120 | Insulated Gate Bipolar Transistor | ON Semiconductor | | |
| IXEH25N120 | NPT3 IGBT | IXYS Corporation | | |
| IXGH25N120 | Low VCE(sat) High speed IGBT | IXYS Corporation | | |
| IXGH25N120A | Low VCE(sat) High speed IGBT | IXYS Corporation | | |
| IXSH25N120A | IGBT | IXYS Corporation | | |
| FGA25N120AN | IGBT | Fairchild Semiconductor | | |
| FGA25N120AND | IGBT | Fairchild Semiconductor | | |
| FGA25N120ANTD | 1200V NPT Trench IGBT | Fairchild Semiconductor | | |
| FGA25N120ANTD | 1200V NPT Trench IGBT | Fairchild Semiconductor | | |
| IXSH25N120AU1 | IGBT with Diode | IXYS Corporation | | |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | ON Semiconductor | | |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode | Motorola, Inc | | |
| FGH25N120FTDS | 1200V, 25A Field Stop Trench IGBT | Fairchild Semiconductor | | |
| IGW25N120H3 | High speed IGBT in Trench and Fieldstop technology | Infineon Technologies AG | | |
| NGTB25N120IHLWG | Incorporated into the device is a rugged copackaged free wheeling diode with a low forward voltage. | ON Semiconductor | | |
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