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| 2N6798 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
2N6798 | N-CHANNEL ENHANCEMENT MODE TRANSISTOR | Seme LAB |  |  |
| *2N6798*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| 2N6798 | N-CHANNEL ENHANCEMENT MODE TRANSISTOR | Seme LAB | | |
| 2N6798 | 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor | List of Unclassifed Manufacturers | | |
| 2N6798 | N-CHANNEL MOSFET | Microsemi Corporation | | |
| 2N6798 | N-CHANNEL ENHANCEMENT | Seme LAB | | |
| 2N6798 | N-CHANNEL MOSFET | Microsemi Corporation | | |
| JANTX2N6798 | POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A) | International Rectifier | | |
| JANTX2N6798 | 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor | List of Unclassifed Manufacturers | | |
| JANTX2N6798 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | | |
| JANTXV2N6798 | POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A) | International Rectifier | | |
| JANTXV2N6798 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | | |
| JANTXV2N6798 | 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor | List of Unclassifed Manufacturers | | |
| 2N6798U | N-CHANNEL MOSFET | Microsemi Corporation | | |
| JANTX2N6798U | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | International Rectifier | | |
| JANTXV2N6798U | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | International Rectifier | | |
| 2N6798_10 | N-CHANNEL MOSFET | Microsemi Corporation | | |
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