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| 2N6849 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
2N6849 | P.CHANNEL POWER MOSFETs | Seme LAB |  |  |
| *2N6849*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| 2N6849 | P.CHANNEL POWER MOSFETs | Seme LAB | | |
| 2N6849 | P-CHANNEL MOSFET | Microsemi Corporation | | |
| 2N6849 | P-CHANNEL MOSFET | Microsemi Corporation | | |
| 2N6849 | P-CHANNEL ENHANCEMENT MOSFET | New Jersey Semi-Conductor Products, Inc. | | |
| JANS2N6849 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | International Rectifier | | |
| JANTX2N6849 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | International Rectifier | | |
| JANTXV2N6849 | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | International Rectifier | | |
| 2N6849U | P-CHANNEL MOSFET | Microsemi Corporation | | |
| JANTX2N6849U | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | International Rectifier | | |
| JANTXV2N6849U | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | International Rectifier | | |
| 2N6849_09 | P-CHANNEL MOSFET | Microsemi Corporation | | |
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