| Компонент | Описание | Производитель | PDF | Buy |
| 2SC3356 | MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) | NEC |  |  |
| 2SC3356 | HIGH FREQUENCY LOW NOISE AMPLIFIER | Unisonic Technologies | | |
| 2SC3356 | NPN Silicon Epitaxial Transistor | Guangdong Kexin Industrial Co.,Ltd | | |
| 2SC3356 | isc Silicon NPN RF Transistor | Inchange Semiconductor Company Limited | | |
| 2SC3356 | High-Frequency Amplifier Transistor NPN Silicon | Weitron Technology | | |
| 2SC3356 | HIGH FREQUENCY LOW NOISE AMPLIFIER | Unisonic Technologies | | |
| 2SC3356 | NPN Silicon Plastic-Encapsulate Transistor | SeCoS Halbleitertechnologie GmbH | | |
| 2SC3356 | HIGH FREQUENCY LOW NOISE AMPLIFIER | Unisonic Technologies | | |
| 2SC3356 | TRANSISTOR (NPN) | Shenzhen Jin Yu Semiconductor Co., Ltd. | | |
| 2SC3356-L | For amplify low noise and high frequency | NEC | | |
| 2SC3356-T1B | For amplify low noise and high frequency | NEC | | |
| 2SC3356-T2B | For amplify low noise and high frequency | NEC | | |
| 2SC3356-VM | For amplify low noise and high frequency | NEC | | |
| 2SC3356-X-AE3-R | HIGH FREQUENCY LOW NOISE AMPLIFIER | Unisonic Technologies | | |
| 2SC3356F | NPN Silicon Plastic Encapsulated Transistor | SeCoS Halbleitertechnologie GmbH | | |
| 2SC3356G-X-AE3-R | HIGH FREQUENCY LOW NOISE AMPLIFIER | Unisonic Technologies | | |
| 2SC3356L-X-AE3-R | HIGH FREQUENCY LOW NOISE AMPLIFIER | Unisonic Technologies | | |
| 2SC3356L-X-AE3-R | HIGH FREQUENCY LOW NOISE AMPLIFIER | Unisonic Technologies | | |
| L2SC3356LT1G | High-Frequency Amplifier Transistor | Leshan Radio Company | | |
| L2SC3356LT3G | High-Frequency Amplifier Transistor | Leshan Radio Company | | |
