| Компонент | Описание | Производитель | PDF | Buy |
| 2SD211 | Silicon NPN Power Transistors | Inchange Semiconductor Company Limited |  |  |
| 2SD211 | Silicon NPN Power Transistors | Savantic, Inc. | | |
| 2SD2110 | isc Silicon NPN Darlington Power Transistor | Inchange Semiconductor Company Limited | | |
| 2SD2111 | isc Silicon NPN Darlington Power Transistor | Inchange Semiconductor Company Limited | | |
| 2SD2112 | isc Silicon NPN Darlington Power Transistor | Inchange Semiconductor Company Limited | | |
| 2SD2113 | isc Silicon NPN Darlington Power Transistor | Inchange Semiconductor Company Limited | | |
| 2SD2114 | NPN Plastic Encapsulated Transistor | SeCoS Halbleitertechnologie GmbH | | |
| 2SD2114 | NPN Plastic-Encapsulate Transistor | SeCoS Halbleitertechnologie GmbH | | |
| 2SD2114 | TRANSISTOR (NPN) | Shenzhen Jin Yu Semiconductor Co., Ltd. | | |
| 2SD2114K | High-current Gain MediumPower Transistor (20V, 0.5A) | Rohm | | |
| 2SD2114K | High-current Gain Medium Power Transistor (20V, 0.5A) | Rohm | | |
| 2SD2114K | Power Transistor | Guangdong Kexin Industrial Co.,Ltd | | |
| 2SD2114K | High-current Gain Medium Power Transistor | Rohm | | |
| 2SD2114K | High-current Gain Medium Power Transistor (20V, 0.5A) | Rohm | | |
| L2SD2114KLT1 | Epitaxial planar type NPN silicon transistor | Leshan Radio Company | | |
| 2SD2114KT146W | High-current Gain Medium Power Transistor (20V, 0.5A) | Rohm | | |
| 2SD2114KV | High-current Gain MediumPower Transistor (20V, 0.5A) | Rohm | | |
| L2SD2114KVLT1 | Epitaxial planar type NPN silicon transistor | Leshan Radio Company | | |
| L2SD2114KVLT1G | Epitaxial planar type NPN silicon transistor | Leshan Radio Company | | |
| L2SD2114KVLT1G | Epitaxial planar type NPN silicon transistor High DC current gain | Leshan Radio Company | | |
