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| Результаты поиска для 3055E | |
| Компонент | Описание | Производитель | PDF | Buy |
| 2N3055E | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. | Seme LAB |  |  |
| RK3055E | Small switching (60V, 8A) | Rohm | | |
| RK3055E | 10V Drive Nch MOS FET | Rohm | | |
| MTD3055E | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount | Motorola, Inc | | |
| MTP3055E | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET | STMicroelectronics | | |
| PHD3055E | PowerMOS transistor | NXP Semiconductors | | |
| PHD3055E | N-channel TrenchMOS transistor | NXP Semiconductors | | |
| PHD3055E | N-channel TrenchMOS standard level FET | NXP Semiconductors | | |
| PHP3055E | N-channel TrenchMOS transistor | NXP Semiconductors | | |
| PHP3055E | N-channel TrenchMOS standard level FET | NXP Semiconductors | | |
| PHX3055E | N-channel TrenchMOS transistor | NXP Semiconductors | | |
| PNP3055E | PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A. | NXP Semiconductors | | |
| MAX13055E | 1.62V to 3.6V, 8-Channel, High-Speed LLT | Maxim Integrated Products | | |
| MMFT3055E | MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS | Motorola, Inc | | |
| MTD3055E1 | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount | Motorola, Inc | | |
| MAX13055EETI+ | 1.62V to 3.6V, 8-Channel, High-Speed LLT | Maxim Integrated Products | | |
| MAX13055EEWG+ | 1.62V to 3.6V, 8-Channel, High-Speed LLT | Maxim Integrated Products | | |
| MTD3055EL | TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate) | Motorola, Inc | | |
| MMFT3055EL | MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS | Motorola, Inc | | |
| MTD3055EL1 | N-channel enhancement-mode silicon gate, 10A, 80V | Motorola, Inc | | |
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